Ruthenium thin films were deposited on SiO 2 / Si substrates at 260-500°C by metallorganic chemical vapor deposition (MOCVD) using a liquid precursor (2.4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium [Ru(DMPD)(EtCp), DMPD: 2.4-dimethylpentadienyl, EtCp: ethylcyclopentadienyl]. The deposition characteristics and the electrical properties of the deposited films were compared with those using bis(ethylcyclopentadienyl)ruthenium [ Ru ( EtCp ) 2 ] precursor. The Ru films from Ru(DMPD)(EtCp) were deposited more stably than those from Ru ( EtCp ) 2 . Both films consisted of Ru single phase for the entire deposition temperature range. Initial nucleation of Ru films from Ru(DMPD)(EtCp) was smaller in size and denser than that from Ru ( EtCp ) 2 . Morover the deposition process from Ru(DMPD)(EtCp) has a much shorter incubation time than that from Ru ( EtCp ) 2 .
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Shibutami et al. (2003) studied this question.
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