Spatial profiles of CF2 concentration in C2 F6 rf plasma are measured by the laser-induced fluorescence method. The observed profiles are explained by the generation and recombination reaction mechanisms of CF2 . It is found that the deposition rate of fluorocarbon polymer on SiO2 film is proportional to [CF2]n ; n=2.5–3.0, whereas the etch rate of SiO2 is proportional to [CF2]. Both the etching and the deposition reactions proceed at the same time. Based on these observations, reaction mechanisms for fluorocarbon polymer deposition and SiO2 etching are analyzed.
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Kitamura et al. (1989) studied this question.