Frequency Response of Metal–Semiconductor Structures With Thin-Films Sapphire Interlayer by ALD Technique

MIS-type Al/Al2O3/p-Si structures were fabricated to identify its admittance analysis through capacitance/conductance versus logarithmic frequency (C / G–V–f) data in the 1 kHz–5 MHz and ±3 V ranges at room temperature. Admittance measurements determine the surface states (Nₛₛ) and these states occurred at M/S interlayer arise as a result of high capacitance and conductance values at low frequencies. This is also explained by adequacy of tracking ac signal byNₛₛat lower frequencies. In consequence withNₛₛpresence, a peak turns up or becomes visible at the normalized parallel conductance versus logarithm of frequency [Gₚ / ω -ln(f)] plot under various biases. In the energy range of (0.17- Eᵥ)–(0.67- Eᵥ),Nₛₛand their life/relaxation time (τ) values vary from4.95× 10¹²to7.42× 10¹¹eV⁻¹· cm⁻²and from7.85× 10⁻⁵to1.05× 10⁻⁶s, respectively.