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April 20, 2018IEEE Electron Device Letters

High RF Performance AlGaN/GaN HEMT Fabricated by Recess-Arrayed Ohmic Contact Technology

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Authors

YLYang LuXidian UniversityXMXiaohua MaZhejiang A & F UniversityLYLing YangXidian University

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Lu et al. (2018) studied this question.

synapsesocial.com/papers/6a9defe2e9d65a99f6367b5bhttps://doi.org/10.1109/led.2018.2828860
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