A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2FET

Asymmetric source and drain (S/D) series resistances (RSand RD) are unavoidable in exfoliated MoS2field-effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage characteristics, the asymmetric RSand RDvalues are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3-10 kHz. Second, the intrinsic RSand RDvalues (RS,intand RD,int) are characterized through deembedding the parasitic pad capacitances (CPad= CS,Pad+ CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the ID-VDcharacteristics in the linear region. Finally, RS,intand RD,intat various parasitic overlap areas are extracted separately with improved accuracy.