Answers are grounded in this paper and cite their sources.
It has been found that the subthreshold currents of fully depleted silicon-on-insulator (SOI) MOSFETs show a transient behavior under certain front-gate and back-gate voltage conditions. The cause of this anomaly is explained, and applications for the phenomenon are pointed out. Particularly, a simple way to measure the silicon film thickness is suggested.>
No takes yet. Share an insight, caveat, or question.
Assaderaghi et al. (1991) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: