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The 180 keV Ca+ and Ar+ ions were homogeneously implanted in GaN at temperature of liquid nitrogen. High resolution x-ray diffraction was used to monitor the change of GaN (0002) peak with the dose ranging from 5×1012 to 1×1016 cm−2. It has been found that with increasing dose a new peak beside the GaN (0002) peak appears, grows up, and gradually shrinks until disappearance with arising of the amorphous peak, accompanied with a shift towards smaller angles. The difference between Ca+ and Ar+ implantation is discussed. Expansion of GaN crystal lattice due to Ca+ and Ar+ implantation accounts for this phenomenon and is confirmed by TEM results.
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Liu et al. (1997) studied this question.
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