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We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiOx/Pt structure. The RRAM device exhibits a large on/off ratio (>; 105), good data retention properties even at 200°C, and stable pulse-switching endurance up to 106 cycles. In comparison with slow switching operation, fast switching operation achieves more uniform program/erase performance in filament-type resistive memory. In order to determine the relationship between the switching speed and the uniformity, we carried out an effective analysis of real pulse operation.
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Shin et al. (2011) studied this question.
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