Junction space charge measurements were used to study a mid-gap level in chemical vapour deposition (CVDS) grown Si 1-x Ge x alloys of three different compositions. Evidence is given for the thermal and optical capacitance transients being fairly exponential. Absolute values of emission rates and capture cross sections for electrons, as well as enthalpies and entropies, are presented. The results suggest that this defect exhibits only a small lattice relaxation effect.
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Nagesh et al. (1990) studied this question.
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