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October 23, 2013Applied Physics Express

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon

Yang Li Geok Ing Ng S. Arulkumaran C. M. Manoj Kumar Kian Siong Ang Mulagumoottil Jesudas Anand Wang Hong René Hofstetter Gang Ye

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Abstract

Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon, Li, Yang, Ng, Geok Ing, Arulkumaran, Subramaniam, Kumar, Chandra Mohan Manoj, Ang, Kian Siong, Anand, Mulagumoottil Jesudas, Wang, Hong, Hofstetter, René, Ye, Gang

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Cite This Study

Li et al. (2013) studied this question.

synapsesocial.com/papers/6a9e714e76674e8b01f6cc37 https://doi.org/10.7567/apex.6.116501

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Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching ApplicationsOriginal Research · 2007 · 22 citations
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3AlGaN/GaN polarization-doped field-effect transistor for microwave power applicationsOriginal Research · 2004 · 99 citations
4Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayersOriginal Research · 2007 · 114 citations
5Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistorsOriginal Research · 2010 · 108 citations

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Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN2011
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