Analysis of Kink Effect in Short-Channel Floating Body PD-SOI MOSFETs

The origin of a greater decrease in kink drain voltage Vkink in floating body PD-SOI MOSFETs with gate lengths shorter than 0.35 μm is newly revealed. The Vkink formula as a function of the internal body voltage and IDS is derived by combining the modified impact ionization multiplication factor with the body-source junction I-V equation. The parameters in this formula are extracted from the measured data of IB vs. IBS and -IB/IDS vs. VDS in the body contacted devices. By calculating the formula using the extracted parameters, it is newly found that a decrease of the drain-source saturation voltage at a shorter channel is a primary cause for the short-channel effect on Vkink reduction.