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February 24, 1992Applied Physics Letters

Electrical characteristics of paraelectric lead lanthanum zirconium titanate thin films for dynamic random access memory applications

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RJRobert E. JonesThe University of Texas at San AntonioPMP.D. ManiarShenzhen Technology UniversityJOJ. O. OlowolafeUniversity of Delaware

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Jones et al. (1992) studied this question.

synapsesocial.com/papers/6a9e87fc2f92033b3c9bc583https://doi.org/10.1063/1.106486
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