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September 13, 2016IEEE Electron Device Letters

Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress

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Authors

MRMaria RuzzarinFondazione Bruno KesslerMMMatteo MeneghiniUniversity of PaduaIRIsabella RossettoUniversity of Padua

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Ruzzarin et al. (2016) studied this question.

synapsesocial.com/papers/6a9e98546e3e9028e6be6b90https://doi.org/10.1109/led.2016.2609098
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