Electrical Properties of Nanometer-Width Refractory Metal Lines Fabricated by Focused Ion Beam and Oxide Resists

Nanometer-width refractory metal lines are generated on Si substrates with high resolution by focused ion beam (FIB) exposure to MoO3 and WO3 inorganic resists, development and subsequent reduction in dry H2 gas. On the basis of some experiments for optimizing the process parameters, the electrical properties of fabricated fine Mo and W lines are evaluated in terms of the sheet resistance and its temperature dependence. A 40-nm-wide line did not show any signs of electromigration after the electrical measurements at current densities of 105 A/cm2 for several tens of minutes.