Electrical resistance of diamond implanted at liquid nitrogen temperature with carbon ions

Carbon ion implantation of diamond to high fluence, below the temperature at which diamond growth can occur, usually leads to black layers of high conductivity. This study shows that for a low enough temperature of the diamond during implantation, a black layer with high electrical resistance can develop. In particular, carbon ion implantation at liquid nitrogen temperature, leads to an implanted layer with electrical resistance about one million times higher than the resistance obtained for implantation at temperatures above room temperature.