Nitride-Based LEDs With Modulation-Doped Al ₀.12hbox Ga₀.88 hbox N –GaN Superlattice Structures

Modulation doped Al/sub 0.12/Ga/sub 0.88/N-GaN superlattice structures were used to spread pulse current in nitride-based light emitting diodes (LEDs). Although the 20-mA electroluminescence (EL) intensity of the LEDs with modulation-doped AlGaN-GaN superlattice structures was found to be 10% smaller than that of the conventional LEDs, it was found that LEDs with the AlGaN-GaN superlattice structures could all endure a 2000-V reverse electrostatic discharge (ESD) pulse voltage. Some LEDs can even survive with an 8000-V reverse ESD pulse voltage, which is equivalent to "Class 3B" of Human Body Mode testing.