Recent progress of FET-type ferroelectric memories is reviewed. It is described that insersion of a buffer layer between the ferroelectric film and Si substrate is essential in preventing interdiffusion of the constituent elements. It is also shown, however, that existence of the buffer layer degrades the data retention characteristic severely. Necessary conditions to solve the short retention time problem are discussed, paying particular attention to comparison of MFIS (metal-ferroelectric-insulator-semiconductor) and MFMIS structures. Finally, a novel ferroelectric-gate FET is proposed, in which the depolarization field is expected not to be generated in the ferroelectric film.
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Hiroshi Ishiwara (2001) studied this question.
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