Small lattice relaxation at the D X center as studied by extended x-ray absorption fine structure on Se-doped AlGaAs

Lattice relaxation at the Se DX center in Al0.38Ga0.62As was determined by the extended x-ray absorption fine structure (EXAFS). During the EXAFS measurements the deep and shallow (metastable) states of the DX center were prepared and the resultant difference of the nearest-neighbor distance around Se between the two electronic states was found to be quite small (less than 0.04 Å). The result is indicative of small lattice relaxation at the DX center.