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Improved performance and stability was demonstrated for ZnO/ZnMgO hetero-MISFETs. The MIS gate structures that were formed using either a 50-nm-thick Al2O3or HfO2gate dielectric layer were examined by observation of the transfer characteristic hysteresis. A significantly reduced hysteresis of less than 0.1 V was obtained for HfO2as compared to that for the Al2O3gate dielectric. By reducing the access resistance, the 1-mum gate devices showed improved transconductance values, as high as 54 mS/mm for Al2O3and 71 mS/mm for HfO2, which are the highest values ever reported for ZnO-based FETs.
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Sasa et al. (2007) studied this question.
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