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February 1, 1999Journal of Applied Physics

Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells

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TTTatsuya TakamotoNational Archives and Records AdministrationMYMasafumi YumaguchiEIEiji IkedaKanazawa Medical University

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Takamoto et al. (1999) studied this question.

synapsesocial.com/papers/6a9ec83db02736842b478e4bhttps://doi.org/10.1063/1.369278
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Also Consider

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  1. 1Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell1988 · 132 citations
  2. 2Over 30% efficient InGaP/GaAs tandem solar cells1997 · 296 citations
  3. 3Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy1988 · 104 citations
  4. 4Thermodynamic explanation to the enhanced diffusion of base dopant in AlGaAs-GaAs n p n bipolar transistors1990 · 76 citations
  5. 5Diffusion of zinc in gallium arsenide: A new model1981 · 247 citations