Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
November 26, 1990Applied Physics Letters

p-type doping limit of carbon in organometallic vapor phase epitaxial growth of GaAs using carbon tetrachloride

View Full Paper
Ask AI
Bookmark
Share

Authors

PEP.M. EnquistResearch Triangle Park Foundation

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

P.M. Enquist (1990) studied this question.

synapsesocial.com/papers/6a9ec8c2d5bc2b98434547d7https://doi.org/10.1063/1.103889
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy1989 · 216 citations
  2. 2Carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by metalorganic chemical vapor deposition using carbon tetrachloride as a dopant source1990 · 59 citations
  3. 3Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy1988 · 104 citations
  4. 4Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy1988 · 181 citations
  5. 5Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga source1984 · 150 citations