A four-terminal non-quasi-static transient analysis of the intrinsic long-channel MOSFET is presented. The analysis, which is valid for arbitrary time-varying voltages applied to the device terminals, has been developed on the basis of a model that holds in all the operating regimes of the device (weak, moderate, and strong inversion). The achieved charge and current behaviors significantly differ from quasi-static results when fast rising (or failing) voltages are applied to the device. The different role played by the drift and the diffusion components of the channel current during the transients is discussed. It is also shown that the proposed approach is in good agreement with available experimental transient measurements.
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Mancini et al. (1987) studied this question.