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August 31, 2020IEEE Electron Device Letters

Very-Low Resistance Contact to 2D Electron Gas by Annealing Induced Penetration Without Spikes Using TaAl/Au on Non-Recessed i-AlGaN/GaN

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Authors

MFMengya FanON Semiconductor (United States)YJYang JiangZhejiang University of TechnologyGYGaiying YangSouthern University of Science and Technology

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Fan et al. (2020) studied this question.

synapsesocial.com/papers/6a9f913254a47f2feff3cc00https://doi.org/10.1109/led.2020.3020232
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