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February 1, 1990Journal of The Electrochemical SocietyOpen Access

Point Defect Charge‐State Effects on Transient Diffusion of Dopants in Si

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RFRichard B. FairUniversity of North Carolina at Charlotte

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Cite This Study

Richard B. Fair (1990) studied this question.

synapsesocial.com/papers/6a9ff030b2b7a06144ba4fed https://doi.org/10.1149/1.2086528

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