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March 28, 1988Applied Physics Letters

Low-temperature epitaxial growth of silicon by low-pressure chemical vapor deposition

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Authors

DMD. MeakinSiemens (Germany)MSM. StobbsUniversity of CambridgeJSJ. StoëmenosAristotle University of Thessaloniki

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Meakin et al. (1988) studied this question.

synapsesocial.com/papers/6a9ff0b540bc1a697f1dece3https://doi.org/10.1063/1.99208
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