We report measurements on the dynamics of negatively charged muonium ( Mu^-) from 295 to 1000 K in heavily doped n-type GaAs:Si. The Mu^- center begins to diffuse above 500K with a hop rate described by an Arrhenius function ν0ex0ex=0ex0exν₀e^-E_μ/kBT where ν₀0ex0ex=0ex0ex5.6(5)×10¹²0ex0exs^-1 and E_μ0ex0ex=0ex0ex0.73(1)0ex0exeV. Above 700K, relaxation from charge-state fluctuations is observed. The analysis of these data implies Mu^-↔Mu⁰ conversions occur via alternating capture of holes and electrons, establishing Mu as a deep recombination center. Similar dynamics are expected for the isolated H^- center in n-type GaAs.
No takes yet. Share an insight, caveat, or question.
Chow et al. (1996) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: