A cluster model is proposed for the midgap state EL2 in GaAs based on a defect reaction similar to that of the thermal donor formation in silicon. Anomalous depth profiles of the EL2 defects in bulk GaAs created by heat treatment have been quantitatively explained, assuming that the EL2 defect is a four point defect cluster. Possible candidates of the point defects are discussed.
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Wada et al. (1985) studied this question.
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