InAIP/InAlGaP distributed Bragg reflectors for visible vertical cavity surface-emitting lasers

Distributed Bragg reflectors (DBRs) composed of In0.5Al0.5P/In0.5(AlyGa1−y)0.5P quarter-wave layers have been prepared using metalorganic vapor phase epitaxy. The structures were grown over a wide range of high-index layer composition (0≤y≤0.6) and peak reflectivity wavelength (720 nm≤λ≤565 nm, covering the spectrum from deep red to green). In all cases observed and calculated reflectance spectra were in excellent agreement. Using these DBRs, an undoped all-phosphide visible vertical cavity surface-emitting laser structure was grown. Under pulsed optical excitation at room temperature, lasing was obtained at a wavelength of λ∼670 nm, with a threshold power density comparable to that observed from similar structures prepared using AlAs/AlGaAs DBRs.