In situ high-resolution electron microscopy reactions in semiconductors

An assessment has been made of the feasibility of performing in situ electron microscopy experiments, under high-resolution imaging conditions at high temperature. The particular field of interest is that of interface reactions in semiconductor systems. It is found that the image quality is sufficiently good, especially with new medium-voltage instruments, that changes in the specimens can be followed for extensive periods of time. Results on the solid phase epitaxial regrowth of silicon compare well with those obtained from high-voltage electron microscopy and Rutherford backscattering spectroscopy studies on the same materials. The behavior of some metal-gallium arsenide reactions (specifically TiGaAs and NiGaAs) has also been investigated. The influence of extremely thin foils is unpredictable at present.