We have achieved room-temperature pulsed operation of 1.4-µm-wavelength GaInNAs/GaAs double quantum well (DQW) lasers with increased nitrogen composition up to 1.7% grown by chemical beam epitaxy (CBE). A threshold current density of 8.9 kA/cm 2 was obtained, and the characteristic temperature ( T 0 ) from 10 to 40°C was 94 K.
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Ikenaga et al. (2002) studied this question.
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