Oxide-isolated integrated Schottky logic

Integrated Schottky logic has been fabricated in an oxide-isolated technology using 5 /spl mu/m lines and spaces. The novel device uses a merged substrate p-n-p (base width /spl sime/1.0 /spl mu/m) to clamp the collector-base junction of the oxide-walled base, down-operated n-p-n transistor. Ion-implanted low-barrier PtSi-nSi Schottky diodes are used for n-p-n collector decoupling. The average propagation delay measured on a 25-stage ring oscillator (fan-in=fan-out=1) was 2.3 ns at 65 /spl mu/A/stage and 25/spl deg/C. This 150 fJ/V power-delay product is a 3.6/spl times/ improvement compared with 540 fJ/V for junction-isolated ISL (2.7 ns at 200 /spl mu/A/stage).