Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value Sc, we find the dc conductivity at low temperatures shows an excellent fit to the scaling form σ(S,T)0ex0ex=0ex0exATˣf[(S-Sc)/Tʸ] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region.