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November 25, 2004Electronics Letters

Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates

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Authors

CLC. LeeHTH.Q. TserngThe University of Texas at DallasLWL. WitkowskiRTX (United States)

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Lee et al. (2004) studied this question.

synapsesocial.com/papers/6aa45d1ff289da0c50d9dd00https://doi.org/10.1049/el:20046921
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