Plasmonically enhanced solar-blind self-powered photodetector array utilizing Pt nanoparticles-modified Ga 2 O 3 nanorod heterojunction

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Low-dimensional Ga 2 O 3 monocrystalline micro/nanostructures show promising application prospects in large-area arrays, integrated circuits, and flexible optoelectronic devices, owing to their exceptional optoelectronic performance and scalability for mass production. Herein, we developed an 8×8 array of high-performance solar-blind ultraviolet photodetectors based on Pt nanoparticles-modified Ga 2 O 3 (PtNPs@ Ga 2 O 3 ) nanorod film heterojunction with p-GaN substrate serving as the hole transporting layer. The PtNPs@ Ga 2 O 3 / GaN heterojunction detector units exhibit outstanding photovoltaic performance at 0 V bias, demonstrating high responsivity (189.0 mA/W), specific detectivity (4.0×10 12 Jones), external quantum efficiency (92.4%), and swift response time (674/692 µs) under an irradiance of 1 μW / cm 2 at 254 nm. Their exceptional performance stands out among competitors of the same type. In addition, the detector array demonstrated satisfactory results in a conceptual demonstration of high-resolution imaging, benefiting from the excellent stability and uniformity exhibited by its array units. These findings provide a straightforward and viable method for developing a high-performance solar-blind ultraviolet detector array based on low-dimensional Ga 2 O 3 nanorod monocrystalline, demonstrating their potential advancement in large-area, integrable, and flexible optoelectronic devices.