Comment on "Modeling of electron-hole scattering in semiconductor devices"

For original paper see D.E. Kane and R.M. Swanson, ibid., vol.40, no.8, pp.1496-1500 (1993). A review of results on electron-hole scattering in semiconductors and semiconductor devices is presented. It is shown that the main relations governing charge carrier transport in the presence of strong electron-hole scattering have been established over the last 15 years.