In situ laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope

We describe an in situ method for studying the influence of deposited laser energy on microstructural evolution during nanosecond laser driven crystallization of amorphous Si. By monitoring microstructural evolution as a function of deposited energy in a dynamic transmission electron microscope (DTEM), information on grain size and defect concentration can be correlated directly with processing conditions. This work demonstrates that DTEM studies are a promising approach for obtaining fundamental information on nucleation and growth processes that have technological importance for the development of thin film transistors.