Reset Statistics of NiO-Based Resistive Switching Memories

In this letter, we present the characterization and modeling of the reset statistics of Pt/NiO/W resistive random access memories. The experimental observations show that the Weibull slopes of bothVresetandIresetcumulative distributions increase linearly with 1/Ron. The value ofVreset63%is roughly independent ofRonwhileIreset63%increases with 1/Ron. Fully analytical cell-based models based on the thermal dissolution of conductive filament are proposed for the reset switching statistical distributions, which can account for the experimental results with a remarkable agreement.