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May 15, 2002Journal of Applied Physics

Polarity inversion of GaN films by trimethyl–aluminum preflow in low-pressure metalorganic vapor phase epitaxy growth

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DLDong-Seok LimKXKe XuChengdu Medical CollegeSASatoshi ArimaHiroshima University

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Lim et al. (2002) studied this question.

synapsesocial.com/papers/6aa74e84da84be885b51cc4bhttps://doi.org/10.1063/1.1471384
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