Optimized Electrical Properties and Chemical Structures of SrTiO[sub 3] Thin Films on Si Using Various Interfacial Barrier Layers

Interfacial barrier layers (IBLs), such as a thermally grown using , thermally nitrided using , and an atomic layer deposited (ALD) layer, were used as an interface layer between a sputtered film and a Si substrate. Sr-silicate phase formation at the interface between the film and Si substrate was suppressed by these IBLs. The ALD layer was the most effective diffusion/reaction barrier against Si diffusion and the interfacial reactions among the IBLs examined. However, the crystallinity of the layer deteriorated as a result of a chemical reaction with the underlying ALD layer, which decreased the permittivity of the layer. The film with a IBL showed lower Si diffusion and better crystallinity, which provided the optimum dielectric properties of the film.