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November 1, 1990Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Extremely high selective, highly anisotropic, and high rate electron cyclotron resonance plasma etching for n+ poly-Si at the electron cyclotron resonance position

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Authors

SSSeiji SamukawaNational Yang Ming Chiao Tung UniversityMSMasami SasakiTamagawa UniversityYSY. SuzukiNihon University

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Samukawa et al. (1990) studied this question.

synapsesocial.com/papers/6aa8196b21935eeb4071399fhttps://doi.org/10.1116/1.584939
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