A flat-panel flexible X-ray image sensor fabricated with oxide thin-film transistors (TFTs) is described. Bottom-gate GaInZnO TFTs are fabricated on a plastic substrate and integrated with amorphous silicon p-i-n photodiodes, with a maximum process temperature of 170°C . X-ray images obtained with a 160 × 180 pixel array in the indirect detection mode are reported.
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Lujan et al. (2012) studied this question.
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