A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO/sub 2/ interface on
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Park et al. (1991) studied this question.
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