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February 19, 2004Semiconductor Science and Technology

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI)

Zhiyuan Cheng Jongwan Jung Minjoo Larry Lee Arthur J. Pitera Judy L. Hoyt D.A. Antoniadis Eugene A. Fitzgerald

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Abstract

Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI), Zhiyuan Cheng, Jongwan Jung, Minjoo L Lee, Arthur J Pitera, Judy L Hoyt, Dimitri A Antoniadis, Eugene A Fitzgerald

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Cheng et al. (2004) studied this question.

synapsesocial.com/papers/6aa9492065c13be784462a33 https://doi.org/10.1088/0268-1242/19/5/l02

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