A mechanism of gate oxide deterioration during As/sup +/ ion implantation

The deterioration or catastrophic breakdown of thin gate oxides during ion implantation is studied. The effect of ion beam density, the distribution of the gate oxide deterioration over a wafer, and the effect of photoresist coverage are shown quantitatively by measuring the number of interface states generated in MOS capacitors. It is shown that the four charge sources contribute to the deterioration of gate oxide: the irradiated ion beam, the secondary electrons emitted from the gate electrode, the charges accumulated on the photoresist surface around the gate electrode, and the secondary electrons emitted from a wafer holder. The first three charges accelerate the deterioration of the gate oxide and the last one reduces it. A model of the gate oxide deterioration in ion implantation that is very useful for finding methods of reducing the charging damage is presented.>