Surface charge buildup on insulated layers during ion implantation can lead to a degradation in the performance of MOS devices with thin gate oxides. In order to study this problem, a set of device structures with 130-AA-thick gate oxides has been designed. The breakdown characteristics of these structures after implantation are reported and analyzed to determine the dependency of implant charging damage on the specific device structure.>
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Felch et al. (1988) studied this question.
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