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The pseudo‐metal oxide semiconductor field effect transistor is a quick method for detailed electrical characterization of bare silicon‐on‐insulator wafers. A recent variant consists in using circular probes. A simple analytical model for the geometrical factor, which is of primary importance for circular Ψ‐MOSFET applications, is presented and validated by 3‐D numerical simulations. Measurements on a SIMOX wafer in both accumulation and inversion are used to test the model.
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Daniela Munteanu (1999) studied this question.
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