We fabricated metal-ferroelectric-metal capacitors and bottom-gate, top-contact nonvolatile ferroelectric transistors (FeFETs) using poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] and poly(3-hexylthiophene) (P3HT) on aluminum foil substrates. P(VDF-TrFE) and P3HT layers were formed by the sol-gel method at low temperature. FeFETs on Al foil substrates exhibited similar properties compared with those fabricated on other rigid and flexible substrates.
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Kim et al. (2017) studied this question.
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