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Bulk boat grown gallium arsenide doped to 1.7 × 1016 cm-3 with silicon was irradiated with 7 MeV electrons until the sample resistivity rose to the range 106 to 108 ohm-cm. Both resistivity versus temperature and Hall-effect versus temperature data indicate the presence of an acceptor-like level at Ec - .31 eV. Carrier removal was found to be approximately 2.3 × 10-3 cm-l and annealing was found to occur near 500 K.
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Mattauch et al. (1975) studied this question.
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