High-Speed E-Mode InAs QW MOSFETs With Al₂ O₃ Insulator for Future RF Applications

We demonstrateLg = 100\ nmhigh-speed enhancement-mode (E-mode) InAs quantum-well MOSFETs with outstanding high-frequency and logic performance. These devices feature a 3-nmAl₂O₃layer grown by atomic layer deposition. The MOSFETs withLg = 100\ nmexhibitVT = 0.2\ V(E-mode),RON = 370\ Ω·,S = 105\ mV/dec,DIBL = 100\ mV/V, andg_mₘax = 1720\ /atVDS = 0.5 \ V. They also have an excellent high-frequency response offT = 248\ GHzandfₘₐₓ = 302\ GHzatVDS = 0.5\ V, the highestfTandfₘₐₓin III–V MOSFETs ever reported.