The Johnson limit predicts that due to fundamental material limitations, the f/sub t/BV/sub ceo/ product for Si bipolar transistors cannot exceed 200 GHz-V. Since this limit ignores many practical components, it should not be achievable experimentally. In light of the fact that results reaching this limit have been reported, we have reevaluated such fundamental limits, and have found that this number should be much higher.
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Ng et al. (1998) studied this question.
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